모델 UJ3C120080K3S 제조사 UnitedSiC 분류 MOSFET RoHS 데이터 시트 UJ3C120080K3S 설명 MOSFET 1200V/80mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
제조사 UnitedSiC 분류 MOSFET Channel Mode Enhancement Id - Continuous Drain Current 33 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 254.2 W Qg - Gate Charge 51 nC Qualification AEC-Q101 Rds On - Drain-Source Resistance 100 mOhms Technology SiC Tradename SiC FET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V